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www..com STD12N65M5, STF12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.370 , 8.5 A MDmeshTM V Power MOSFET DPAK, TO-220FP, TO-220, IPAK Preliminary Data Features Type STD12N65M5 STF12N65M5 STP12N65M5 STU12N65M5 710 V < 0.41 VDSS @ TJmax RDS(on) max ID 8.5 A 8.5 A 8.5 A PW 2 3 1 3 1 2 70 W 70 W 70 W 8.5 A(1) 25 W IPAK TO-220 3 1. Limited only by maximum temperature allowed 1 1 2 3 Worldwide best RDS(on) * area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% Avalanche tested DPAK TO-220FP Figure 1. Internal schematic diagram Application Switching applications Description MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known company's PowerMESHTM horizontal layout. The resulting product has an extremely low onresistance, unmatched among silicon-based Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Marking 12N65M5 12N65M5 12N65M5 12N65M5 Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube Order codes STD12N65M5 STF12N65M5 STP12N65M5 STU12N65M5 February 2009 Rev 2 1/14 www.st.com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www..com Contents STx12N65M5 Contents 1 2 3 4 5 6 Electrical ratings ........................................... 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 www..com STx12N65M5 Electrical ratings 1 Electrical ratings (a) Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, IPAK, DPAK 650 25 8.5 5.4 34 70 TBD TBD 15 2500 - 55 to 150 150 8.5 (1) Unit TO-220FP V V A A A W A mJ V/ns V C C VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Storage temperature Max. operating junction temperature 5.4 (1) 34 (1) PTOT IAR EAS dv/dt (3) VISO Tstg Tj 25 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 8.5 A, di/dt 400 A/s; VPeak < V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Tl Thermal data Value Parameter DPAK IPAK TO-220 TO-220FP Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 50 300 C 1.79 100 62.5 5 C/W C/W Unit a. All data which refers solely to the TO-220FP package is preliminary 3/14 www..com Electrical characteristics STx12N65M5 2 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 650 1 100 100 3 4 0.37 5 0.41 Typ. Max. Unit V A A nA V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 4.3 A Table 5. Symbol Ciss Coss Crss Co(tr)(1) Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge VDS = 0 to 520 V, VGS = 0 TBD pF Test conditions Min. Typ. 1000 24 3.2 Max. Unit pF pF pF VDS = 100 V, f = 1 MHz, VGS = 0 TBD pF Co(er)(2) RG Qg Qgs Qgd f = 1 MHz open drain VDD = 520 V, ID = 4.3 A, VGS = 10 V (see Figure 3) TBD 19 TBD TBD nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/14 www..com STx12N65M5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 400 V, ID = 5 A, RG = 4.7 , VGS = 10 V (see Figure 4) Min. Typ. TBD TBD TBD TBD Max Unit ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, VGS = 0 ISD = 8.5 A, di/dt = 100 A/s VDD = 100 V (see Figure 7) ISD = 8.5 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 7) TBD TBD TBD TBD TBD TBD Test conditions Min. Typ. Max. Unit 8.5 34 1.5 A A V ns nC A ns nC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% 5/14 www..com Test circuits STx12N65M5 3 Figure 2. Test circuits Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/14 www..com STx12N65M5 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 7/14 www..com Package mechanical data STx12N65M5 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 8/14 www..com STx12N65M5 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 9/14 www..com Package mechanical data STx12N65M5 TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 10/14 www..com STx12N65M5 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/14 www..com Packaging mechanical data STx12N65M5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 www..com STx12N65M5 Revision history 6 Revision history Table 8. Date 24-Feb-2009 27-Feb-2009 Document revision history Revision 1 2 First release Corrected package information on first page. Changes 13/14 www..com STx12N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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